100A 1700V Half bridge IGBT module DGA100H170M2T 34mm

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

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Model:
DGA100H170M2T
Brand:
WXDH
Datasheet:
DGA100H170M2T-REV1.0.pdf
Package:
34mm
V:
1700V
A:
100A

50A 1200V Half bridge module

1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 2.25V @ IC =100A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

 Welding

 UPS

 Three-leve Inverter

 AC and DC servo drive amplifier

Type	VCE	Ic	VCEsat,Tj=25℃	Tjop	Package
DGA100H170M2T	1700V	100A (Tj=100℃)	2.25V (Typ)	175℃	34MM

IGBT Module