Availability: | |
---|---|
Quantity: | |
DGA100H170M2T
WXDH
34mm
1700V
100A
50A 1200V Half bridge module
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.25V @ IC =100A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
DGA100H170M2T | 1700V | 100A (Tj=100℃) | 2.25V (Typ) | 175℃ | 34MM |
50A 1200V Half bridge module
1 Description These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.25V @ IC =100A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
DGA100H170M2T | 1700V | 100A (Tj=100℃) | 2.25V (Typ) | 175℃ | 34MM |