注: 建议图片大小150px*50px 
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Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.
Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.8Ω)
● Low gate charge(Typ: 33.9nC)
● Low reverse transfer capacitances(Typ: 11.2pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.
Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.8Ω)
● Low gate charge(Typ: 33.9nC)
● Low reverse transfer capacitances(Typ: 11.2pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
