丨
Committed to becoming a leader in
POWER
SEMICONDUCTORS
View More
banner2
COMMITTED TO 
BECOMING A LEADER IN 
POWER SEMICONDUCTORS
GAZELLE ENTERPRISE
View More
Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
0 +
㎡

Floor area

0 +
million

Registered capital

0 +
million

Production line capacity

0 +
%

Product authenticity

1

About Company

Jiangsu Donghai Semiconductor Co., Ltd. was established in December 2004, located at No. 88, Zhongtong East Road, Shuofang, Xinwu District, Wuxi city, Jiangsu Province. It covers an area of 15000m2. The registered capital is 81.5 million yuan. It has an annual production line of 500 million power devices. There are four laboratories for device characteristic test, reliability test, application test and failure analysis. Donghai is a high-tech enterprise engaged in development, design, packaging, testing and sales of semiconductor power devices and integrated circuits.

Product Center

The main products are: MOSFET, IGBT, diode, etc. It is widely used in various consumer electronic products, industrial electronic products, new energy, Intelligent Automotive Electronics, 5G and other fields.
MOSFET
DIODE
IGBT
MODULE
Our Advantage
Jiangsu Donghai Semiconductor Co., Ltd
  • Professional technology
  • Strong productivity
  • Advanced equipment
  • Innovation research
  • Good after-sales service

Hot Products

DH030N03
DH030N03
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
0
0
F7N80
F7N80
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards.
0
0
DH100P20D
DH100P20D
These P-channel Enhanced VDMOSFETs, Used advanced trench technology and design, provide to excellent Rdson with low gate charge. Which accords with the RoHS standard.
0
0
G40N120D
G40N120D
ROUM Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.
0
0
G50T65D
G50T65D
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
0
0
MBRF20100CT
MBRF20100CT
Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO Inside the package, this device combines high current rating and low volume to enhance both reliability and power density of the application. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
0
0
MUR6030NCA
MUR6030NCA
60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor
0
0
MBR30R45CTS
MBR30R45CTS
Dual center tab Schottky rectifier suited for High Frequency server and telecom base station SMPS. Packaged in TO Inside the package, this device combines high current rating and low volume to enhance both reliability and power density of the application. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
0
0
DGC40C120M2T
DGC40C120M2T
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
0
0
DCC040M120A2
DCC040M120A2
This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required.
0
0
  • WIND POWER
  • Charging Pile
  • Automotive Electronics
  • Industrial Electronics

News Center

→
11_1365_905.jpg
→
2019黄山宏村两天游.jpg
→
2021年第四届春节跑步.jpg
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox
    Subscribe
Copyright © 2023​​​​​​​ Jiangsu Donghai Semiconductor Co., Ltd   Technology by leadong.com