DGB600H120L2T

600A 1200V Half bridge module

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Model:
DGB600H120L2T
Brand:
WXDH

Product Description

600A 1200V Half bridge module

1 Description

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =600A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier

Type VCE Ic VCEsat,Tj=25℃ Tjop Package

DGB600H120L2T 1200V 600A (Tj=100℃) 1.7V (Typ) 175℃ 62MM

600A 1200V Half bridge module

Product Category

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Jiangsu Donghai Semiconductor Co., Ltd. which was established in December 2004, is located at No. 88, East Zhongtong Road, Shuofang Town, Xinwu District, Wuxi City, Jiangsu Province. With area of 15,000 square meters and a registered capital of 81.50 million yuan, it is a high-tech enterprise majors

Type	VCE	Ic	VCEsat,Tj=25℃	Tjop	Package
DGB600H120L2T	1200V	600A (Tj=100℃)	1.7V (Typ)	175℃	62MM