注: 建议图片大小150px*50px 
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75A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature
coefficient
● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C
● Extremely enhanced avalanche capability
Applications
● Welding
● UPS
● Three-leve Inverter
● AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGA75H65M2T | 650V | 75A (Tj=100℃) | 1.7V (Typ) | 175℃ | 34MM |
75A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature
coefficient
● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C
● Extremely enhanced avalanche capability
Applications
● Welding
● UPS
● Three-leve Inverter
● AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGA75H65M2T | 650V | 75A (Tj=100℃) | 1.7V (Typ) | 175℃ | 34MM |
