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80A 650V Trenchstop Insulated Gate Bipolar Transistor DGC80F65M TO-247

80A 650V Trenchstop Insulated Gate Bipolar Transistor

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Model:
DGC80F65M
Brand:
WXDH

Product Description

80A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Features

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =80A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter

Vces	Package	Ic(Tj=100℃)
650V	TO-247-3L	80A

80A 650V Trenchstop Insulated Gate Bipolar Transistor

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