注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
7N65/F7N65/I7N65/ E7N65/B7N65/D7N65
WXDH
7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤1.45Ω)
● Low Gate Charge(Typ: 24nC)
● Low Reverse Transfer Capacitances(Typ: 5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 1.25Ω | 7A |
7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast Switching
● ESD Improved Capability
● Low ON Resistance(Rdson≤1.45Ω)
● Low Gate Charge(Typ: 24nC)
● Low Reverse Transfer Capacitances(Typ: 5.5pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)(TYP) | ID |
| 650V | 1.25Ω | 7A |
