丨
Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MODULE » PIM » 600A 1200V Half bridge module DGD600H120L2T

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

600A 1200V Half bridge module DGD600H120L2T

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
Inquire Add to Basket

  • DGD600H120L2T

  • WXDH

600A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.79V @ IC =600A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

  •  Welding 

  •  UPS 

  •  Three-leve Inverter 

  • AC and DC servo drive amplifier



  • Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGD600H120L2T 1200V 600A (Tj=100℃) 1.79V (Typ) 150℃ EconoDUAL3
Previous: 
Next: 
Module

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox
    Subscribe
Copyright © 2023​​​​​​​ Jiangsu Donghai Semiconductor Co., Ltd   Technology by leadong.com