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50A 650V Trenchstop Insulated Gate Bipolar Transistor G50T65DS TO-247S

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

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Model:
G50T65DS
Brand:
WXDH

Product Description

50A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter

VCE	Vcesat,Tj=25℃	Ic	Tjmax	Package
650V	2.0V	50A	175℃	TO-247S

IGBT

Product Category

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