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40A 650V Trenchstop Insulated Gate Bipolar Transistor G40N65D TO-3PF

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and
switching performances, high avalanche ruggedness easy parallel operation

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Model:
G40N65D
Brand:
WXDH

Product Description

40A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Description Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =40A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter

Vces	Package	Ic(Tj=100℃)
650V	TO-220	40A

IGBT

Product Category

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