注: 建议图片大小150px*50px 
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MUR3060NCT
WXDH
30A 600V Fast recovery diode
1 Description
30A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor
2 Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 600V | 1.6V | 15A |
30A 600V Fast recovery diode
1 Description
30A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor
2 Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 600V | 1.6V | 15A |
