Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MODULE » PIM » 100A 1200V Half bridge module

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

100A 1200V Half bridge module

100A 1200V Half bridge module
Availability:
Quantity:
  • DGA100H120M2T

  • WXDH

100A 1200V Half bridge module


1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

  ● FS Trench Technology, Positive temperature coefficient 

  ● Low saturation voltage: VCE(sat), typ = 1.9V @ IC =100A and Tj = 25°C 

  ● Extremely enhanced avalanche capability 


3 Applications 

  • Welding 

  • UPS 

  • Three-leve Inverter 

  • AC and DC servo drive amplifier




    Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGA100H120M2T 1200V 100A (Tj=100℃) 1.9V (Typ) 175℃ 34MM
Previous: 
Next: 

Product Category

Latest News

  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox