50A 650V Trenchstop Insulated Gate Bipolar Transistor G50T65D TO-3PN

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

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Model:
G50T65D
Brand:
WXDH
Datasheet:
G50T65D 技术规格书.pdf
Package:
TO-3PN
V:
650V
A:
50A

50A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Description

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =50A and Tj =25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter

Vces	Vcesat,Tj=25℃	Ic
650V	2.0V	50A

IGBT