注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DHD80N03
WXDH
TO-252B
30V
40A
40A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
| VDSS | RDS(on)(TYP) | ID |
| 30V | 5.2mΩ | 40A |
40A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
| VDSS | RDS(on)(TYP) | ID |
| 30V | 5.2mΩ | 40A |
