注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DHS180N10LD
WXDH
TO-252B
100V
50A
100V/15mΩ/50A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced SGT trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 15mΩ | 50A |
100V/15mΩ/50A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced SGT trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 15mΩ | 50A |
