注: 建议图片大小150px*50px 
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DGC75F120M2
WXDH
75A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.1V @ IC =75A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| Vces | Package | Ic(Tj=100℃) |
| 1200V | TO-247PLUS | 75A |
75A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 1200V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.1V @ IC =75A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| Vces | Package | Ic(Tj=100℃) |
| 1200V | TO-247PLUS | 75A |
