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DGC50C120M2T
WXDH
Econo PIM2
1200V
50A
50A 1200V PIM in one-package
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
Low gate charge
Excellent switching speed
Easy paralleling capability due to positive temperature Coefficient in VCEsat
Tsc≥10µs
Fast recovery full current anti-parallel diode
Low VCEsat
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
DGC50C120M2T | 1200V | 50A (Tj=100℃) | 1.85V (Typ) | 150℃ | Econo PIM2 |
50A 1200V PIM in one-package
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
Low gate charge
Excellent switching speed
Easy paralleling capability due to positive temperature Coefficient in VCEsat
Tsc≥10µs
Fast recovery full current anti-parallel diode
Low VCEsat
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
DGC50C120M2T | 1200V | 50A (Tj=100℃) | 1.85V (Typ) | 150℃ | Econo PIM2 |