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DHU3N90J/DHD3N90J
WXDH
N-channel Enhancement Mode Power MOSFET 3A 900V
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤5.5Ω)
● Low gate charge(Typ: 16nC)
● Low reverse transfer capacitances(Typ: 6.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
Vces | RDS(on) (TYP) | ID |
900V | 4.7mΩ | 3A |
N-channel Enhancement Mode Power MOSFET 3A 900V
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤5.5Ω)
● Low gate charge(Typ: 16nC)
● Low reverse transfer capacitances(Typ: 6.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
Vces | RDS(on) (TYP) | ID |
900V | 4.7mΩ | 3A |