DGC75C120M2T

75A 1200V 6 in one-package

1 Description

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =75A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

 Welding

 UPS

 Three-leve Inverter

 AC and DC servo drive amplifier