注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DHG50N120D
WXDH
DHG50N120D
34mm
1200V
50A
50A 1200V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
Low gate charge
Excellent switching speed
Easy paralleling capability due to positive temperature Coefficient in VCEsat
Tsc≥10µs
Fast recovery full current anti-parallel diode
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DHG50N120D | 1200V | 50A (Tj=100℃) | 1.8V (Typ) | 175℃ | 34MM |
50A 1200V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
Low gate charge
Excellent switching speed
Easy paralleling capability due to positive temperature Coefficient in VCEsat
Tsc≥10µs
Fast recovery full current anti-parallel diode
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DHG50N120D | 1200V | 50A (Tj=100℃) | 1.8V (Typ) | 175℃ | 34MM |
