注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DH100P30D
WXDH
TO-252B
-100V
-35A
-100V/33mΩ/-35A P-MOSFET
1 Description
These P-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
Applications
• Load switch
| VDSS | RDS(on) (TYP) | ID |
| -100V | 33mΩ | -35A |
-100V/33mΩ/-35A P-MOSFET
1 Description
These P-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
Applications
• Load switch
| VDSS | RDS(on) (TYP) | ID |
| -100V | 33mΩ | -35A |
