25A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast Switching
● Low ON Resistance(Rdson≤36mΩ)
● Low Gate Charge(Typical:61nC)
● Low Reverse Transfer Capacitances(Typical:84pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Power switching applications
● LED Boost
● UPS power supply
● Load switch
VDSS |
RDS(on)(TYP) |
ID |
100V |
30mΩ |
25A |