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D4N80
WXDH
TO-252B
800V
4A
4A 800V N-channel Enhancement Mode Power MOSFET
1 Description
D4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252B, which accords with the RoHS standard.
2 Features
Fast Switching
Low ON Resistance(Rdson≤4.0Ω)
Low Gate Charge (Typical Data:17.3 nC)
Low Reverse transfer capacitances(Typical: 4.3pF)
100% Single Pulse avalanche energy Test
3 Applications
Power switch circuit of adaptor and charger.
VDSS | RDS(on)(TYP) | ID |
800V | 3.7Ω | 4A |
4A 800V N-channel Enhancement Mode Power MOSFET
1 Description
D4N80 , the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252B, which accords with the RoHS standard.
2 Features
Fast Switching
Low ON Resistance(Rdson≤4.0Ω)
Low Gate Charge (Typical Data:17.3 nC)
Low Reverse transfer capacitances(Typical: 4.3pF)
100% Single Pulse avalanche energy Test
3 Applications
Power switch circuit of adaptor and charger.
VDSS | RDS(on)(TYP) | ID |
800V | 3.7Ω | 4A |