50A 1200V PIM in one-package IGBT Module DGC50C120M2T Econo PIM2

50A 1200V PIM in one-package

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 

2 Features 

 Low gate charge 

 Excellent switching speed 

 Easy paralleling capability due to positive temperature Coefficient in VCEsat 

 Tsc≥10µs 

 Fast recovery full current anti-parallel diode 

 Low VCEsat 

3 Applications 

 Welding 

 UPS 

 Three-leve Inverter 

 AC and DC servo drive amplifier

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  Type	VCE	Ic	VCEsat,Tj=25℃	Tjop	Package
  DGC50C120M2T	1200V	50A (Tj=100℃)	1.85V (Typ)	150℃	Econo PIM2