注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DSG054N10N3
WXDH
100V/4.8mΩ/140A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● Pb-Free plating / Halogen-Free
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor Control and Drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 4.8mΩ | 140A |
100V/4.8mΩ/140A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● Pb-Free plating / Halogen-Free
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Motor Control and Drive
● Charge/Discharge for Battery Management System
● Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 100V | 4.8mΩ | 140A |
