注: 建议图片大小150px*50px 
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DHD7N65
WXDH
7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Feature
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.4Ω)
● Low gate charge(Typ: 24nC)
● Low reverse transfer capacitances(Typ: 5.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor
| VDSS | RDS(on)（TYP) | ID |
| 650V | 1.2 Ω | 7A |
7A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Feature
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.4Ω)
● Low gate charge(Typ: 24nC)
● Low reverse transfer capacitances(Typ: 5.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor
| VDSS | RDS(on)（TYP) | ID |
| 650V | 1.2 Ω | 7A |
