DGF25F65M

25A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Description

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and

switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature

coefficient

● Low saturation voltage: VCE(sat), typ = 1.85V

@ IC =25A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level Inverter