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75A 650V Trenchstop Insulated Gate Bipolar Transistor
Description1
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features:
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C
Extremely enhanced avalanche capability
Applications:
Welding, UPS, Three-level Inverter
Type | Vce | Ic | Vcesat,Tj=25℃ | Tjmax | Package |
DGC75F65M | 650V | 75A | 1.7V | 175℃ | TO-247 |
75A 650V Trenchstop Insulated Gate Bipolar Transistor
Description1
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features:
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C
Extremely enhanced avalanche capability
Applications:
Welding, UPS, Three-level Inverter
Type | Vce | Ic | Vcesat,Tj=25℃ | Tjmax | Package |
DGC75F65M | 650V | 75A | 1.7V | 175℃ | TO-247 |