DGC60F65M

60A 650V Trenchstop Insulated Gate Bipolar Transistor

Description1 

Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.

Features：

 FS Trench Technology, Positive temperature coefficient

 Low saturation voltage: VCE(sat), typ = 1.9V @ IC =60A and Tj = 25°C

 Extremely enhanced avalanche capability

Applications：

Welding, UPS, Three-level Inverter