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F9N90
WXDH
9A 900V N-channel Enhancement Mode Power MOSFET
1 Description
These are N-channel enhancement mode power field effect transistors. It optimized stripe cell structure design improves the EAS capability of the device.Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on-state resistance
● Low gate charge
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● LED power switch circuit
● Electronic ballast
● Switch mode power supply
● Electronic transformer
VDSS | RDS(on)(TYP) | ID |
900V | 0.95Ω | 9A |
9A 900V N-channel Enhancement Mode Power MOSFET
1 Description
These are N-channel enhancement mode power field effect transistors. It optimized stripe cell structure design improves the EAS capability of the device.Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on-state resistance
● Low gate charge
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● LED power switch circuit
● Electronic ballast
● Switch mode power supply
● Electronic transformer
VDSS | RDS(on)(TYP) | ID |
900V | 0.95Ω | 9A |