注: 建议图片大小150px*50px 
 |
| Quantity: | |
|---|---|
F8N65
WXDH
8A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.4Ω)
● Low gate charge(Typ: 23.7nC)
● Low reverse transfer capacitances(Typ:6.1pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)（TYP) | ID |
| 650V | 1.15Ω | 8A |
8A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤1.4Ω)
● Low gate charge(Typ: 23.7nC)
● Low reverse transfer capacitances(Typ:6.1pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
| VDSS | RDS(on)（TYP) | ID |
| 650V | 1.15Ω | 8A |
