 |
| Quantity: | |
|---|---|
DGA75H65M2T
WXDH
34mm
650V
75A
75A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =75A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGA75H65M2T | 650V | 75A (Tj=100℃) | 1.7V (Typ) | 175℃ | 34MM |
75A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 2.0V @ IC =75A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGA75H65M2T | 650V | 75A (Tj=100℃) | 1.7V (Typ) | 175℃ | 34MM |
