Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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450A 1200V Half bridge module IGBTModule DGB450H120L2T 62mm

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
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450A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.


2 Features 

  ● FS Trench Technology, Positive temperature coefficient 

  ● Low saturation voltage: VCE(sat), typ = 1.75V @ IC =450A and Tj = 25°C 

  ● Extremely enhanced avalanche capability

3 Applications 

  • Welding 

  • UPS 

  • Three-leve Inverter 

  • AC and DC servo drive amplifier


    Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGB450H120L2T 1200V 450A (Tj=100℃) 1.75V (Typ) 175℃ 62MM
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