Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » IGBT MODULE » PIM » 400A 650V Half bridge module IGBTModule DGD400H65M2T EconoDUAL3 PACKAGE

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

400A 650V Half bridge module IGBTModule DGD400H65M2T EconoDUAL3 PACKAGE

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:

400A 650V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.45V @ IC =400A and Tj = 25°C 

● Extremely enhanced avalanche capability


3 Applications 

  •  Welding 

  •  UPS 

  •  Three-leve Inverter 

  • AC and DC servo drive amplifier



  • Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGD400H65M2T 650V 400A (Tj=100℃) 1.45V (Typ) 175℃ EconoDUAL3
Previous: 
Next: 
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox