 |
| Quantity: | |
|---|---|
G25T120D
WXDH
TO-247
1200V
25A
25A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Planar design and advanced FS technology, the 1200V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
2.Features：
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V @ IC =25A and TC = 100°C
Extremely enhanced avalanche capability
3.Applications：
Aircondition、
Welding、
UPS…
| Vces | Package | Ic(Tj=100℃) |
| 1200V | TO-247-3L | 25A |
25A 1200V Trenchstop Insulated Gate Bipolar Transistor
1 Features
Using DongHai's proprietary Planar design and advanced FS technology, the 1200V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
2.Features：
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 2.0V @ IC =25A and TC = 100°C
Extremely enhanced avalanche capability
3.Applications：
Aircondition、
Welding、
UPS…
| Vces | Package | Ic(Tj=100℃) |
| 1200V | TO-247-3L | 25A |
