注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
20N60/F20N60/20N60D
WXDH
20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel enhanced vdmosfets are obtained by the self-aligned planar technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤0.45Ω)
● Low gate charge(Typ: 61nC)
● Low reverse transfer capacitances(Typ: 20pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Application
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)（TYP) | ID |
| 600V | 0.36Ω | 20A |
20A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These silicon N-channel enhanced vdmosfets are obtained by the self-aligned planar technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The package form is TO-220F. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance(Rdson≤0.45Ω)
● Low gate charge(Typ: 61nC)
● Low reverse transfer capacitances(Typ: 20pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Application
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of adaptor and charger.
| VDSS | RDS(on)（TYP) | ID |
| 600V | 0.36Ω | 20A |
