 |
| Quantity: | |
|---|---|
DHG20T65D
WXDH
TO-220F
650V
18A
18A 650V Insulated Gate Bipolar Transistor DHG20T65D TO-220F
1 Description
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features：
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.8V @ IC =18A and TC = 25°C
Extremely enhanced avalanche capability
| Vces | Vcesat | Ic |
| 650V | 1.8V | 18A |
18A 650V Insulated Gate Bipolar Transistor DHG20T65D TO-220F
1 Description
Using DongHai's proprietary Trench design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features：
FS Trench Technology, Positive temperature coefficient
Low saturation voltage: VCE(sat), typ = 1.8V @ IC =18A and TC = 25°C
Extremely enhanced avalanche capability
| Vces | Vcesat | Ic |
| 650V | 1.8V | 18A |
