注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DSE028N10N3
WXDH
TO-263
100V
170A
170A 100V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 2.4mΩ | 170A |
170A 100V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 2.4mΩ | 170A |
