注: 建议图片大小150px*50px
丨
注: 建议图片大小150px*50px
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F16N60
WXDH
16A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤0.5Ω)
● Low gate charge(Typ: 49.3nC)
● Low reverse transfer capacitances(Typ: 10.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor
| VDSS | RDS(on)（TYP) | ID |
| 600V | 0.41Ω | 16A |
16A 600V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906).
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤0.5Ω)
● Low gate charge(Typ: 49.3nC)
● Low reverse transfer capacitances(Typ: 10.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor
| VDSS | RDS(on)（TYP) | ID |
| 600V | 0.41Ω | 16A |
