Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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16A 200V Fast recovery diode MUR1620CT TO-220C

16A, 200V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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16A 200V Fast recovery diode


1 Description

16A, 200V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectififiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. 


2 Features 

  •  Low power loss,

  •  high efficiency Low forward voltage, 

  •  high current capability High surge capacity 

  •  Super fast recovery times 

  •  high voltage 


3 Applications 

  • Switching Power Supply 

  • Power Switching Circuits 

  • General Purpose



VBR VF(single)(MAX) IF(AV)(single)
200V 0.98V 8A



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