注: 建议图片大小150px*50px 
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| Quantity: | |
|---|---|
DGA160H65M2T
WXDH
34mm
650V
160A
160A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =160A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGA160H65M2T | 650V | 160A (Tj=100℃) | 1.8V (Typ) | 175℃ | 34MM |
160A 650V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =160A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGA160H65M2T | 650V | 160A (Tj=100℃) | 1.8V (Typ) | 175℃ | 34MM |
