注: 建议图片大小150px*50px 
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| Quantity: | |
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MURF1060
WXDH
10A 600V Fast recovery diode
1 Description
10A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
2 Features
Low power loss
high efficiency Low forward voltage
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 600V | 1.6V | 10A |
10A 600V Fast recovery diode
1 Description
10A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
2 Features
Low power loss
high efficiency Low forward voltage
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 600V | 1.6V | 10A |
