 |
| Quantity: | |
|---|---|
DH033N03D
WXDH
TO-252B
30V
100A
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced mode power vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low switching loss
● Low on resistance
● Low gate charge
● Low reverse transfer capacitance
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● DC-DC converters
| VDSS | RDS(on)(TYP) | ID |
| 30V | 3.3 mΩ | 100A |
100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced mode power vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low switching loss
● Low on resistance
● Low gate charge
● Low reverse transfer capacitance
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● DC-DC converters
| VDSS | RDS(on)(TYP) | ID |
| 30V | 3.3 mΩ | 100A |
