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Description
60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor.
Features
● Low power loss
● high efficiency Low forward voltage
● high current capability High surge capacity
● Super fast recovery times
● high voltage
Applications
● Switching Power Supply
● Power Switching Circuits
● Inverter power supply
Description
60A, 300V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor.
Features
● Low power loss
● high efficiency Low forward voltage
● high current capability High surge capacity
● Super fast recovery times
● high voltage
Applications
● Switching Power Supply
● Power Switching Circuits
● Inverter power supply
