注: 建议图片大小150px*50px 
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DGB800H120L2T
WXDH
800A 1200V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =800A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGQ450C65M2T | 1200V | 800A (Tj=100℃) | 1.7V (Typ) | 175℃ | 62MM |
800A 1200V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =800A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGQ450C65M2T | 1200V | 800A (Tj=100℃) | 1.7V (Typ) | 175℃ | 62MM |
