注: 建议图片大小150px*50px 
 |
| Quantity: | |
|---|---|
DAGC75H65M
WXDH
75A 650V Trenchstop Insulated Gate Bipolar Transistor SiC Hybrid Discrete
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT co-packed with SiC diode offers superior switching performances, high avalanche ruggedness and easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C
● Low switching losses due to the combination of FS technology and SiC technology
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
| 650V | 1.7V | 75A | 175℃ | TO-247 |
75A 650V Trenchstop Insulated Gate Bipolar Transistor SiC Hybrid Discrete
1 Features
Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT co-packed with SiC diode offers superior switching performances, high avalanche ruggedness and easy parallel operation
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =75A and Tj = 25°C
● Low switching losses due to the combination of FS technology and SiC technology
● Extremely enhanced avalanche capability
3 Applications
● Welding
● UPS
● Three-level Inverter
| VCE | Vcesat,Tj=25℃ | Ic | Tjmax | Package |
| 650V | 1.7V | 75A | 175℃ | TO-247 |
