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6A 650V Trenchstop Insulated Gate Bipolar Transistor DGD06F65M2 TO-252B

6A 650V Trenchstop Insulated Gate Bipolar Transistor

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Model:
DGD06F65M2
Brand:
WXDH

Product Description

6A 650V Trenchstop Insulated Gate Bipolar Transistor

1 Features

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation

2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.73V @ IC =6A and Tj = 25°C

● Extremely enhanced avalanche capability

3 Applications

● Welding

● UPS

● Three-level

VCE	Vcesat,Tj=25℃	Ic	Tjmax	Package
650V	1.73V	6A	150℃	TO-252B

6A 650V Trenchstop Insulated Gate Bipolar Transistor

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