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Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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50A 650V Trenchstop Insulated Gate Bipolar Transistor DGC50F65M2 TO-247

50A 650V Trenchstop Insulated Gate Bipolar Transistor
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  • DGC50F65M2

  • WXDH

50A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =50A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding 

● UPS 

● Three-level Inverter


VCE Vcesat,Tj=25℃ Ic Tjmax Package
650V 1.8V 50A  175℃ TO-247


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50A 650V Trenchstop Insulated Gate Bipolar Transistor

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