注: 建议图片大小150px*50px
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注: 建议图片大小150px*50px
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MUR1620CT
WXDH
16A 200V Fast recovery diode
1 Description
16A, 200V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectififiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
2 Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 200V | 0.98V | 8A |
16A 200V Fast recovery diode
1 Description
16A, 200V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectififiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
2 Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 200V | 0.98V | 8A |
